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AP04N20GK-HF MOSFET Transistor

The AP04N20GK-HF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP04N20GK-HF transistor as follows.

Circuit diagram symbol of the AP04N20GK-HF transistor

AP04N20GK-HF Transistor Specification

Transistor Code AP04N20GK-HF
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT223
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 1A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.2Ohm
Power Dissipation (Maximum) PD 2.7W
Drain-Source Capacitance 50pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6nS

AP04N20GK-HF MOSFET Transistor Overview

The AP04N20GK-HF is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT223 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the AP04N20GK-HF MOSFET

Followings are the key electrical characteristics of the AP04N20GK-HF MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in AP04N20GK-HF MOSFET transistor is 200V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the AP04N20GK-HF MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the AP04N20GK-HF MOSFET transistor is 1A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of AP04N20GK-HF MOSFET transistor when the transistor is fully turned on is 1.2 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the AP04N20GK-HF MOSFET transistor can comfortably transfer into heat without breaking is 2.7W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the AP04N20GK-HF MOSFET transistor is 50pF. This value influences to the switching speed of the AP04N20GK-HF MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the AP04N20GK-HF MOSFET transistor is switched on is 6nS. This is the rate at which AP04N20GK-HF MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the AP04N20GK-HF MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of AP04N20GK-HF MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the AP04N20GK-HF MOSFET transistor. You can download the official AP04N20GK-HF MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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