RFP2N10L MOSFET Transistor

The RFP2N10L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the RFP2N10L transistor as follows.

RFP2N10L Transistor Specification

Transistor Code		RFP2N10L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.05Ohm
Power Dissipation (Maximum)	PD	25W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2V

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