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KQ9N50P MOSFET Transistor

The KQ9N50P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KQ9N50P transistor as follows.

Circuit diagram symbol of the KQ9N50P transistor

KQ9N50P Transistor Specification

Transistor Code KQ9N50P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220AB
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.65Ohm
Power Dissipation (Maximum) PD 135W
Drain-Source Capacitance 120pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS
Total Gate Charge 29.5nC

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