PMV65XPEA MOSFET Transistor

The PMV65XPEA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMV65XPEA transistor as follows.

PMV65XPEA Transistor Specification

Transistor Code		PMV65XPEA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-236AB
Transistor SMD Code		DN*
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.078Ohm
Power Dissipation (Maximum)	PD	0.48W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS
Gate-Threshold Voltage (Maximum)		1.25V
Total Gate Charge		5nC

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