PMV250EPEA MOSFET Transistor

The PMV250EPEA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMV250EPEA transistor as follows.

PMV250EPEA Transistor Specification

Transistor Code		PMV250EPEA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-236AB
Transistor SMD Code		*JY
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.24Ohm
Power Dissipation (Maximum)	PD	0.48W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		6nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		4.7nC

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