PMV20XNE MOSFET Transistor

The PMV20XNE is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PMV20XNE transistor as follows.

PMV20XNE Transistor Specification

Transistor Code		PMV20XNE
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-236AB
Transistor SMD Code		*G9
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	0.51W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		0.9V
Total Gate Charge		12.4nC

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