PJS6800 MOSFET Transistor

The PJS6800 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PJS6800 transistor as follows.

PJS6800 Transistor Specification

Transistor Code		PJS6800
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23-6L
Transistor SMD Code		ST0
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	3.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.048Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		44pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		57nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		11.3nC

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