PDNM6T20V7E MOSFET Transistor

The PDNM6T20V7E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PDNM6T20V7E transistor as follows.

PDNM6T20V7E Transistor Specification

Transistor Code		PDNM6T20V7E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-23-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	1.3W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		448nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		16.2nC

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