PDM6T20V3 MOSFET Transistor

The PDM6T20V3 is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PDM6T20V3 transistor as follows.

PDM6T20V3 Transistor Specification

Transistor Code		PDM6T20V3
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		SOT-23-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		5.2nC

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