PHM21NQ15T MOSFET Transistor

The PHM21NQ15T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHM21NQ15T transistor as follows.

PHM21NQ15T Transistor Specification

Transistor Code		PHM21NQ15T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		QLPAK
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.055Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		285pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		36.2nC

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