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PHM15NQ20T MOSFET Transistor

The PHM15NQ20T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHM15NQ20T transistor as follows.

Circuit diagram symbol of the PHM15NQ20T transistor

PHM15NQ20T Transistor Specification

Transistor Code PHM15NQ20T
Transistor Type MOSFET
Control Channel Type N-Channel
Package QLPAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 17.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.085Ohm
Power Dissipation (Maximum) PD 62.5W
Drain-Source Capacitance 220pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 12nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 40nC

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