PHM12NQ20T MOSFET Transistor

The PHM12NQ20T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHM12NQ20T transistor as follows.

PHM12NQ20T Transistor Specification

Transistor Code		PHM12NQ20T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		QLPAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.13Ohm
Power Dissipation (Maximum)	PD	62.5W
Drain-Source Capacitance		155pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10.2nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		26nC

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