PHB3N40E MOSFET Transistor

The PHB3N40E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB3N40E transistor as follows.

PHB3N40E Transistor Specification

Transistor Code		PHB3N40E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT404
Drain-Source Voltage (Maximum)	VDS	400V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.5Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		150°C

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