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PHB65N06LT MOSFET Transistor

The PHB65N06LT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB65N06LT transistor as follows.

Circuit diagram symbol of the PHB65N06LT transistor

PHB65N06LT Transistor Specification

Transistor Code PHB65N06LT
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT404
Drain-Source Voltage (Maximum) VDS 55V
Drain Current (Maximum) ID 63A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.018Ohm
Power Dissipation (Maximum) PD 150W
Operating Junction Temperature (Maximum) 150°C

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