PHB6N50E MOSFET Transistor

The PHB6N50E is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB6N50E transistor as follows.

PHB6N50E Transistor Specification

Transistor Code		PHB6N50E
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT404
Drain-Source Voltage (Maximum)	VDS	500V
Drain Current (Maximum)	ID	5.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	125W
Operating Junction Temperature (Maximum)		150°C

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