PHB160NQ08T MOSFET Transistor

The PHB160NQ08T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PHB160NQ08T transistor as follows.

PHB160NQ08T Transistor Specification

Transistor Code		PHB160NQ08T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	75V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	75A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0056Ohm
Power Dissipation (Maximum)	PD	300W
Drain-Source Capacitance		845pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		56nS
Gate-Threshold Voltage (Maximum)		4V

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