IRFS5615 MOSFET Transistor

The IRFS5615 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFS5615 transistor as follows.

IRFS5615 Transistor Specification

Transistor Code		IRFS5615
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2PAK
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	33A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.042Ohm
Power Dissipation (Maximum)	PD	144W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		26nC

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