PD636BA MOSFET Transistor

The PD636BA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PD636BA transistor as follows.

PD636BA Transistor Specification

Transistor Code		PD636BA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	37.9W
Drain-Source Capacitance		143pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS

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