AP6N3R8H MOSFET Transistor

The AP6N3R8H is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AP6N3R8H transistor as follows.

AP6N3R8H Transistor Specification

Transistor Code		AP6N3R8H
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	155A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0038Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		2480pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		135nS
Gate-Threshold Voltage (Maximum)		5V

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