30P55 MOSFET Transistor

The 30P55 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 30P55 transistor as follows.

30P55 Transistor Specification

Transistor Code		30P55
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	90W
Drain-Source Capacitance		240pF
Operating Junction Temperature (Maximum)		150°C

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