20N06 MOSFET Transistor

The 20N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 20N06 transistor as follows.

20N06 Transistor Specification

Transistor Code		20N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.045Ohm
Power Dissipation (Maximum)	PD	40W
Operating Junction Temperature (Maximum)		175°C

20N06 MOSFET Transistor Overview

The 20N06 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO252 package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the 20N06 MOSFET

Followings are the key electrical characteristics of the 20N06 MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in 20N06 MOSFET transistor is 60V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the 20N06 MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the 20N06 MOSFET transistor is 20A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of 20N06 MOSFET transistor when the transistor is fully turned on is 0.045 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the 20N06 MOSFET transistor can comfortably transfer into heat without breaking is 40W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Rise Time

The time that the drain current or output voltage increases between low to high when the 20N06 MOSFET transistor is switched on is . This is the rate at which 20N06 MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 20N06 MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of 20N06 MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the 20N06 MOSFET transistor. You can download the official 20N06 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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