free stats

Home » Electronics » FET » 11N10C Transistor

11N10C MOSFET Transistor

The 11N10C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 11N10C transistor as follows.

Circuit diagram symbol of the 11N10C transistor

11N10C Transistor Specification

Transistor Code 11N10C
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 11A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.095Ohm
Power Dissipation (Maximum) PD 28W
Drain-Source Capacitance 120pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 3nS

11N10C MOSFET Transistor Overview

The 11N10C is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO252 package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the 11N10C MOSFET

Followings are the key electrical characteristics of the 11N10C MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in 11N10C MOSFET transistor is 100V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the 11N10C MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the 11N10C MOSFET transistor is 11A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of 11N10C MOSFET transistor when the transistor is fully turned on is 0.095 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the 11N10C MOSFET transistor can comfortably transfer into heat without breaking is 28W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the 11N10C MOSFET transistor is 120pF. This value influences to the switching speed of the 11N10C MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the 11N10C MOSFET transistor is switched on is 3nS. This is the rate at which 11N10C MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 11N10C MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of 11N10C MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the 11N10C MOSFET transistor. You can download the official 11N10C MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

16N10 16N10 MOSFET Transistor 18N10 18N10 MOSFET Transistor 20N06 20N06 MOSFET Transistor 21N06 21N06 MOSFET Transistor 22N10 22N10 MOSFET Transistor 25P10G 25P10G MOSFET Transistor 28N10 28N10 MOSFET Transistor 28P55 28P55 MOSFET Transistor 2N60D 2N60D MOSFET Transistor 2SJ128-Z 2SJ128-Z MOSFET Transistor 2SJ130S 2SJ130S MOSFET Transistor 2SJ132-Z 2SJ132-Z MOSFET Transistor 2SJ133-Z 2SJ133-Z MOSFET Transistor 2SJ182S 2SJ182S MOSFET Transistor 2SJ234S 2SJ234S MOSFET Transistor 2SJ245S 2SJ245S MOSFET Transistor 2SJ246S 2SJ246S MOSFET Transistor 2SJ279L 2SJ279L MOSFET Transistor 2SJ279S 2SJ279S MOSFET Transistor 2SJ314-01S 2SJ314-01S MOSFET Transistor