NDT15N10 MOSFET Transistor

The NDT15N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the NDT15N10 transistor as follows.

NDT15N10 Transistor Specification

Transistor Code		NDT15N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	14.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	34.7W
Drain-Source Capacitance		58pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS

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