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P2206BD MOSFET Transistor

The P2206BD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the P2206BD transistor as follows.

Circuit diagram symbol of the P2206BD transistor

P2206BD Transistor Specification

Transistor Code P2206BD
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 32A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0225Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 125pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 24nS

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