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IRLR8203PBF MOSFET Transistor

The IRLR8203PBF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRLR8203PBF transistor as follows.

Circuit diagram symbol of the IRLR8203PBF transistor

IRLR8203PBF Transistor Specification

Transistor Code IRLR8203PBF
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 110A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0068Ohm
Power Dissipation (Maximum) PD 140W
Drain-Source Capacitance 1200pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 99nS
Gate-Threshold Voltage (Maximum) 3V

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