MTP9006E3 MOSFET Transistor

The MTP9006E3 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTP9006E3 transistor as follows.

MTP9006E3 Transistor Specification

Transistor Code		MTP9006E3
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.089Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		69pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS

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