MTE05N08E3 MOSFET Transistor

The MTE05N08E3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTE05N08E3 transistor as follows.

MTE05N08E3 Transistor Specification

Transistor Code		MTE05N08E3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0043Ohm
Power Dissipation (Maximum)	PD	333W
Drain-Source Capacitance		702pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		41nS
Total Gate Charge		120nC

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