FDP13AN06A0 MOSFET Transistor

The FDP13AN06A0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP13AN06A0 transistor as follows.

FDP13AN06A0 Transistor Specification

Transistor Code		FDP13AN06A0
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	62A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0135Ohm
Power Dissipation (Maximum)	PD	115W
Drain-Source Capacitance		260pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		96nS
Gate-Threshold Voltage (Maximum)		4V

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