MTN6515E3 MOSFET Transistor

The MTN6515E3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTN6515E3 transistor as follows.

MTN6515E3 Transistor Specification

Transistor Code		MTN6515E3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		725pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		115nS

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