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FDP10AN06A0 MOSFET Transistor

The FDP10AN06A0 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP10AN06A0 transistor as follows.

Circuit diagram symbol of the FDP10AN06A0 transistor

FDP10AN06A0 Transistor Specification

Transistor Code FDP10AN06A0
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220AB
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 75A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0105Ohm
Power Dissipation (Maximum) PD 135W
Drain-Source Capacitance 340pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 128nS
Gate-Threshold Voltage (Maximum) 4V

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