PS60N60 MOSFET Transistor

The PS60N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the PS60N60 transistor as follows.

PS60N60 Transistor Specification

Transistor Code		PS60N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	110W
Drain-Source Capacitance		400pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		54nC

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