MTE010N10E3 MOSFET Transistor

The MTE010N10E3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MTE010N10E3 transistor as follows.

MTE010N10E3 Transistor Specification

Transistor Code		MTE010N10E3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0096Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		250pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		12nS
Total Gate Charge		48nC

UXPython is not the creator or an official representative of the MTE010N10E3 MOSFET transistor. You can download the official MTE010N10E3 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

BUZ91A MOSFET Transistor SUP90N08-7M7P MOSFET Transistor AM90P06-20P MOSFET Transistor PS60N60 MOSFET Transistor PSMN003-30P MOSFET Transistor SIHF9530 MOSFET Transistor BUK751R6-30E MOSFET Transistor FDP8441_F085 MOSFET Transistor IRF1407PBF MOSFET Transistor IRF9610PBF MOSFET Transistor SUP85N04-03 MOSFET Transistor IRF9530PBF MOSFET Transistor PJP4NA60 MOSFET Transistor SIHP12N65E MOSFET Transistor PJP5NA80 MOSFET Transistor IRFZ30PBF MOSFET Transistor SIHF520 MOSFET Transistor SIHP8N50D MOSFET Transistor BUZ72L MOSFET Transistor HY125N10T MOSFET Transistor