HY125N10T MOSFET Transistor

The HY125N10T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HY125N10T transistor as follows.

HY125N10T Transistor Specification

Transistor Code		HY125N10T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220AB
Transistor SMD Code		125N10T
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0058Ohm
Power Dissipation (Maximum)	PD	192W
Drain-Source Capacitance		680pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		19.2nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		178nC

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