KU086N10P MOSFET Transistor

The KU086N10P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KU086N10P transistor as follows.

KU086N10P Transistor Specification

Transistor Code		KU086N10P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	95A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0073Ohm
Power Dissipation (Maximum)	PD	167W
Drain-Source Capacitance		630pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		230nS
Total Gate Charge		200nC

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