KMB050N60P MOSFET Transistor

The KMB050N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMB050N60P transistor as follows.

KMB050N60P Transistor Specification

Transistor Code		KMB050N60P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.018Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		460pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		100nS

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