KU024N06P MOSFET Transistor

The KU024N06P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KU024N06P transistor as follows.

KU024N06P Transistor Specification

Transistor Code		KU024N06P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220AB
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	200A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0021Ohm
Power Dissipation (Maximum)	PD	192W
Drain-Source Capacitance		1400pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		300nS
Total Gate Charge		200nC

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