KMB7D1DP30QA MOSFET Transistor

The KMB7D1DP30QA is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMB7D1DP30QA transistor as follows.

KMB7D1DP30QA Transistor Specification

Transistor Code		KMB7D1DP30QA
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		FLP8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	22V
Drain Current (Maximum)	ID	7.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.02Ohm
Power Dissipation (Maximum)	PD	1.1W
Drain-Source Capacitance		420pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Total Gate Charge		33nC

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