KMB4D5NP55Q MOSFET Transistor

The KMB4D5NP55Q is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMB4D5NP55Q transistor as follows.

KMB4D5NP55Q Transistor Specification

Transistor Code		KMB4D5NP55Q
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		FLP8
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.5(3)A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.04(0.085)Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		67(75)pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.4(14.3)nS

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