KMA5D8DP20Q MOSFET Transistor

The KMA5D8DP20Q is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the KMA5D8DP20Q transistor as follows.

KMA5D8DP20Q Transistor Specification

Transistor Code		KMA5D8DP20Q
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		FLP8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029Ohm
Power Dissipation (Maximum)	PD	2W
Operating Junction Temperature (Maximum)		150°C
Rise Time		37nS

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