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IXTT2N170D2 MOSFET Transistor

The IXTT2N170D2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT2N170D2 transistor as follows.

Circuit diagram symbol of the IXTT2N170D2 transistor

IXTT2N170D2 Transistor Specification

Transistor Code IXTT2N170D2
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-268
Drain-Source Voltage (Maximum) VDS 1700V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 2A
Drain-Source On-State Resistance (Maximum) RDS(on) 6.5Ohm
Power Dissipation (Maximum) PD 568W
Drain-Source Capacitance 206pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 58nS
Total Gate Charge 110nC

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