IXFT30N50Q MOSFET Transistor

The IXFT30N50Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT30N50Q transistor as follows.

IXFT30N50Q Transistor Specification

Transistor Code		IXFT30N50Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-268
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	30A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.16Ohm
Power Dissipation (Maximum)	PD	360W
Drain-Source Capacitance		640pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		42nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		190nC

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