IXTT140P10T MOSFET Transistor

The IXTT140P10T is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT140P10T transistor as follows.

IXTT140P10T Transistor Specification

Transistor Code		IXTT140P10T
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-268
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	140A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.012Ohm
Power Dissipation (Maximum)	PD	568W
Drain-Source Capacitance		2045pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		26nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		400nC

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