IXTT20N50D MOSFET Transistor

The IXTT20N50D is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT20N50D transistor as follows.

IXTT20N50D Transistor Specification

Transistor Code		IXTT20N50D
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	20A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.33Ohm
Power Dissipation (Maximum)	PD	400W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.5V
Total Gate Charge		78.5nC

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