IXFT7N90Q MOSFET Transistor

The IXFT7N90Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFT7N90Q transistor as follows.

IXFT7N90Q Transistor Specification

Transistor Code		IXFT7N90Q
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.5Ohm
Power Dissipation (Maximum)	PD	180W
Operating Junction Temperature (Maximum)		150°C
Rise Time		250nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		56nC

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