IXTT90P10P MOSFET Transistor

The IXTT90P10P is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTT90P10P transistor as follows.

IXTT90P10P Transistor Specification

Transistor Code		IXTT90P10P
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO268
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	90A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	462W
Operating Junction Temperature (Maximum)		150°C
Rise Time		144nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		120nC

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