IXTQ180N055T MOSFET Transistor

The IXTQ180N055T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTQ180N055T transistor as follows.

IXTQ180N055T Transistor Specification

Transistor Code		IXTQ180N055T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	55V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	180A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.004Ohm
Power Dissipation (Maximum)	PD	360W
Drain-Source Capacitance		1190pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		61nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		160nC

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