FQA10N80 MOSFET Transistor

The FQA10N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA10N80 transistor as follows.

FQA10N80 Transistor Specification

Transistor Code		FQA10N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.05Ohm
Power Dissipation (Maximum)	PD	240W
Drain-Source Capacitance		215pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		115nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		55nC

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