FQA35N40 MOSFET Transistor

The FQA35N40 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA35N40 transistor as follows.

FQA35N40 Transistor Specification

Transistor Code		FQA35N40
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.105Ohm
Power Dissipation (Maximum)	PD	310W
Drain-Source Capacitance		730pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		360nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		110nC

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