IXTH3N200P3HV MOSFET Transistor

The IXTH3N200P3HV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH3N200P3HV transistor as follows.

IXTH3N200P3HV Transistor Specification

Transistor Code		IXTH3N200P3HV
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247HV
Drain-Source Voltage (Maximum)	VDS	2000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	8Ohm
Power Dissipation (Maximum)	PD	520W
Drain-Source Capacitance		133pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		5V

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