IXTH2N300P3HV MOSFET Transistor

The IXTH2N300P3HV is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXTH2N300P3HV transistor as follows.

IXTH2N300P3HV Transistor Specification

Transistor Code		IXTH2N300P3HV
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247HV
Drain-Source Voltage (Maximum)	VDS	3000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	21Ohm
Power Dissipation (Maximum)	PD	520W
Drain-Source Capacitance		90pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS
Gate-Threshold Voltage (Maximum)		5V

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